Si7852DP Datasheet_Transistor element query

Transistor element query

Input part number Input parameters

Part Number:Si7852DP

Part Type:N-Channel FET

Power Dissipation (P_D):
[Ambient temperature (Ta) = 25 ℃]5.2 W

Drain current (I_D):
[Ambient temperature (Ta) = 25 ℃]12.5 A

Drain-source voltage (V_DSS):80 V

Gate Threshold Voltage (V_GS(th)):≥2 V

Drain-source on resistance (R_DS(on)):0.0165 Ω

Package:PowerPAK-SO-8