Transistor element query
Part Number:3DG112D
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.3 W
Collector maximum allowable current (ICM):0.05 A
Collector-base breakdown voltage (BVCBO):40 V
Collector-emitter breakdown voltage (BVCEO):30 V
Emitter-base breakdown voltage (BVEBO):4 V
Collector cut-off current (ICBO):0.1 μA
Emitter cut-off current (IEBO):0.1 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 0.01 A]0.35 V
[Collector current (Ic) = 0.01 A]0.35 V
Transition frequency (fT):700 MHz
DC current gain (hFE):40~270
Package:B-2
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