Transistor element query
Part Number:TGAN40N120FDR
Part Type:IGBT
Power Dissipation (PD):
[Case temperature (Tc) = 100 ℃]200 W
[Case temperature (Tc) = 100 ℃]200 W
Collector current (IC):
[Case temperature (Tc) = 100 ℃]40 A
[Case temperature (Tc) = 100 ℃]40 A
Collector-emitter voltage (VCES):1200 V
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 40 A]2.5 V
[Collector current (Ic) = 40 A]2.5 V
Package:TO-3P
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