HYG055N08NS1P Datasheet_Transistor element query

Transistor element query

Input part number Input parameters

Part Number:HYG055N08NS1P

Part Type:N-Channel FET

Power Dissipation (P_D):
[Case temperature (Tc) = 25 ℃]187.5 W

Drain current (I_D):
[Case temperature (Tc) = 25 ℃]120 A

Drain-source voltage (V_DSS):80 V

Drain-source on resistance (R_DS(on)):0.0068 Ω

Package:TO-220AB