HYG016N04LS1B Datasheet_Transistor element query

Transistor element query

Input part number Input parameters

Part Number:HYG016N04LS1B

Part Type:N-Channel FET

Power Dissipation (P_D):
[Case temperature (Tc) = 25 ℃]200 W

Drain current (I_D):
[Case temperature (Tc) = 25 ℃]240 A

Drain-source voltage (V_DSS):40 V

Drain-source on resistance (R_DS(on)):0.0017 Ω

Package:TO-263