HYG011N04LS1TA Datasheet_Transistor element query

Transistor element query

Input part number Input parameters

Part Number:HYG011N04LS1TA

Part Type:N-Channel FET

Power Dissipation (P_D):
[Case temperature (Tc) = 25 ℃]250 W

Drain current (I_D):
[Case temperature (Tc) = 25 ℃]320 A

Drain-source voltage (V_DSS):40 V

Drain-source on resistance (R_DS(on)):0.0012 Ω

Package:TOLL