Transistor element query
Part Number:BC639
Part Type:NPN Transistor
Total Device Dissipation (Ptot):
[Case temperature (Tc) = 25 ℃]0.8 W
[Case temperature (Tc) = 25 ℃]0.8 W
Collector current (IC):1 A
Collector-emitter voltage (VCEO):80 V
Collector-base breakdown voltage (BVCBO):80 V
Collector-emitter breakdown voltage (BVCEO):80 V
Emitter-base breakdown voltage (BVEBO):5 V
Collector cut-off current (ICBO):0.1 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 0.5 A]0.5 V
[Collector current (Ic) = 0.5 A]0.5 V
Transition frequency (fT):100 MHz
DC current gain (hFE):40~160
chip material:silicon
Package:TO-92
More NPN TransistorBC119C2610BF259SBFT43BFY52BFR39BFY56C2230BC368BF2592N16132SC2230C2086BF186BSX32