Transistor element query
Part Number:3DK2C
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.2 W
Collector maximum allowable current (ICM):0.3 A
Collector-base breakdown voltage (BVCBO):20 V
Collector-emitter breakdown voltage (BVCEO):15 V
Emitter-base breakdown voltage (BVEBO):4 V
Collector-emitter leakage current (ICEO):0.1 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 0.1 A]0.35 V
[Collector current (Ic) = 0.1 A]0.35 V
Transition frequency (fT):150 MHz
DC current gain (hFE):25~180
chip material:silicon
Package:B-1
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