Transistor element query
Part Number:3DG10E
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.5 W
Collector maximum allowable current (ICM):0.1 A
Collector-emitter breakdown voltage (BVCEO):20 V
Emitter-base breakdown voltage (BVEBO):4 V
Transition frequency (fT):300 MHz
DC current gain (hFE):25~270
Package:B-4
More NPN TransistorBT9303BX612N7593DG121C2N335A2N740BT708TBT2484BT929TJAN2N720ABT2221T2SC1247AFBT2708TCDQ10006BT918