Transistor element query
Part Number:3BX55M
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.5 W
Collector maximum allowable current (ICM):0.5 A
Collector-base breakdown voltage (BVCBO):50 V
Collector-emitter breakdown voltage (BVCEO):12 V
Collector cut-off current (ICBO):80 μA
Collector-emitter leakage current (ICEO):1200 μA
Transition frequency (fT):0.006 MHz
DC current gain (hFE):≥30
chip material:germanium
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