Transistor element query
Part Number:SGH80T60SMD
Part Type:IGBT
Power Dissipation (PD):
[Case temperature (Tc) = 25 ℃]428 W
[Case temperature (Tc) = 25 ℃]428 W
Collector current (IC):
[Case temperature (Tc) = 100 ℃]80 A
[Case temperature (Tc) = 100 ℃]80 A
Collector-emitter voltage (VCES):600 V
Gate−emitter threshold voltage (VGE(th)):4~6 V
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 80 A]1.8 V
[Collector current (Ic) = 80 A]1.8 V
Package:TO-247
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