Transistor element query
Part Number:SE1G
Part Type:Ultrafast Recovery Diode
reverse recovery time (trr):50 ns
Peak Repetitive Reverse Voltage (VRRM):400 V
continuous forward current (IF):1 A
Non-Repetitive Peak Forward Surge Current (IFSM):30 A
Forward Voltage (VF):1.1 V
[continuous forward current (IF) = 1 A]
[continuous forward current (IF) = 1 A]
reverse leakage current (IR):5 μA
[Ambient temperature (Ta) = 25 ℃]
[Ambient temperature (Ta) = 25 ℃]
Junction Capacitance (Cj):50 pF
RMS Reverse Voltage(VR(RMS)):280 V
Package:SMA
More Ultrafast Recovery DiodeSF604GBYV29-400SF18GBAV19WSUS5ASF10A06MUR1070HER606GSF37UGP20GMUR340MUR805SF8A60BYV27-150MUR1506