Transistor element query
Part Number:OSG65R1K4D
Part Type:N-Channel FET
Power Dissipation (PD):28.4 W
Drain current (ID):
[Case temperature (Tc) = 25 ℃]4 A
[Case temperature (Tc) = 25 ℃]4 A
Drain-source voltage (VDSS):650 V
Drain-source on resistance (RDS(on)):1.4 Ω
Package:TO-252
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