LSH65R1K6GT Datasheet_Transistor element query

Transistor element query

Input part number Input parameters

Part Number:LSH65R1K6GT

Part Type:N-Channel FET

Power Dissipation (P_D):38 W

Drain current (I_D):
[Case temperature (Tc) = 25 ℃]3 A

Drain-source voltage (V_DSS):650 V

Drain-source on resistance (R_DS(on)):1.6 Ω

Package:TO-251