Transistor element query
Part Number:LSGD10R080W3
Part Type:N-Channel FET
Power Dissipation (PD):48 W
Drain current (ID):
[Case temperature (Tc) = 25 ℃]80 A
[Case temperature (Tc) = 25 ℃]80 A
Drain-source voltage (VDSS):100 V
Drain-source on resistance (RDS(on)):0.008 Ω
Package:TO-220MF
More N-Channel FET2SK2654-01IXFK94N50P22SK1942-01HY3210PBF244CTSP10N60MFDH047AN08A0SGW210N60SJ2SK1723IXTM5N100(A)SVG103R0NTBF245CFHP80N08BK30A06N1FLC161WF