LSD65R760GT Datasheet_Transistor element query

Transistor element query

Input part number Input parameters

Part Number:LSD65R760GT

Part Type:N-Channel FET

Power Dissipation (P_D):29 W

Drain current (I_D):
[Case temperature (Tc) = 25 ℃]5 A

Drain-source voltage (V_DSS):650 V

Drain-source on resistance (R_DS(on)):0.76 Ω

Package:TO-220MF