Transistor element query
Part Number:KGT40N60KDA
Part Type:IGBT
Power Dissipation (PD):
[Case temperature (Tc) = 25 ℃]290 W
[Case temperature (Tc) = 25 ℃]290 W
Collector current (IC):
[Case temperature (Tc) = 100 ℃]40 A
[Case temperature (Tc) = 100 ℃]40 A
Collector-emitter voltage (VCES):600 V
Gate−emitter threshold voltage (VGE(th)):4.5~7 V
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 40 A]2.2 V
[Collector current (Ic) = 40 A]2.2 V
Package:TO-247
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