IRF640N Datasheet_Transistor element query

Transistor element query

Input part number Input parameters

Part Number:IRF640N

Part Type:N-Channel FET

Power Dissipation (P_D):
[Case temperature (Tc) = 25 ℃]150 W

Drain current (I_D):
[Case temperature (Tc) = 25 ℃]18 A

Drain-source voltage (V_DSS):200 V

Gate Threshold Voltage (V_GS(th)):2~4 V

Drain-source on resistance (R_DS(on)):0.15 Ω

Package:TO-220AB