Transistor element query
Part Number:IGW75N60T(G75T60)
Part Type:IGBT
Total Device Dissipation (Ptot):428 W
Collector current (IC):
[Case temperature (Tc) = 25 ℃]150 A
[Case temperature (Tc) = 25 ℃]150 A
Collector-emitter voltage (VCES):600 V
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 75 A]2 V
[Collector current (Ic) = 75 A]2 V
Package:TO-247
More IGBTGT20G101IGW25T120(G25T120)FGA15N120ANTDGT80J101ABUP314DIRGP4086RJH1BF7RDPQ-80KGF40N120KDAGT40RR22TSG60N100CEBUP200DIKY75N120CH3(K75MCH3)IRG4PH50SPbFGT30F131RJH60D0DPK