Transistor element query
Part Number:IGB50N60T(G50T60)
Part Type:IGBT
Total Device Dissipation (Ptot):333 W
Collector current (IC):
[Case temperature (Tc) = 25 ℃]90 A
[Case temperature (Tc) = 25 ℃]90 A
Collector-emitter voltage (VCES):600 V
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 50 A]2 V
[Collector current (Ic) = 50 A]2 V
Package:TO-263
More IGBTMBQ60T65PESIGP10N60T(G10T60)FGY75T120SQDNGT40Q323GT50NR21G25N120RJP63K2DPP-M01MBH60-100IKW75N60H3(K75H603)IXGH24N60ASKW25N120IHW30N120R2(H30R1202)1MBH60D-090AIHW30N135R5(H30PR5)FGA60N65SMD