Transistor element query
Part Number:IGB30N60T(G30T60)
Part Type:IGBT
Total Device Dissipation (Ptot):187 W
Collector current (IC):
[Case temperature (Tc) = 25 ℃]45 A
[Case temperature (Tc) = 25 ℃]45 A
Collector-emitter voltage (VCES):600 V
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 30 A]2.05 V
[Collector current (Ic) = 30 A]2.05 V
Package:TO-263
More IGBTIKY40N120CH3(K40MCH3)IRG4BC10UDGT50NR21IKW50N60T(K50T60)G40N150DERD65-090IXGP8N100HGTG40N60B3IGW25N120H3(G25H1203)GT8G103FGA60N60UFDIKW25N120T2(K25T1202)RGTH60TS65CRG15T60A84SIHW20T120