Transistor element query
Part Number:IGB01N120H2(G01H1202)
Part Type:IGBT
Total Device Dissipation (Ptot):
[Case temperature (Tc) = 25 ℃]28 W
[Case temperature (Tc) = 25 ℃]28 W
Collector current (IC):
[Case temperature (Tc) = 100 ℃]1 A
[Case temperature (Tc) = 100 ℃]1 A
Collector-emitter voltage (VCES):1200 V
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 1 A]2.8 V
[Collector current (Ic) = 1 A]2.8 V
Package:TO-263
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