Transistor element query
Part Number:HYG035N10NS2P
Part Type:N-Channel FET
Power Dissipation (PD):
[Case temperature (Tc) = 25 ℃]220 W
[Case temperature (Tc) = 25 ℃]220 W
Drain current (ID):
[Case temperature (Tc) = 25 ℃]180 A
[Case temperature (Tc) = 25 ℃]180 A
Drain-source voltage (VDSS):100 V
Drain-source on resistance (RDS(on)):0.004 Ω
Package:TO-220
More N-Channel FETAP2306AGNIRFR1205JCS18N50FHLSGN10R085W3MDD4N25IRFAE50FLS50MEIRFR120NIRF1405IXTM4N70(A)JCS20N60CAHIRC2543N171FLM6472-8C/DIXTP80N10T