HYG024N03LR1D Datasheet_Transistor element query

Transistor element query

Input part number Input parameters

Part Number:HYG024N03LR1D

Part Type:N-Channel FET

Power Dissipation (P_D):
[Case temperature (Tc) = 25 ℃]57 W

Drain current (I_D):
[Case temperature (Tc) = 25 ℃]100 A

Drain-source voltage (V_DSS):30 V

Drain-source on resistance (R_DS(on)):0.0028 Ω

Package:TO-252