Transistor element query
Part Number:HY5608W
Part Type:N-Channel FET
Power Dissipation (PD):500 W
Drain current (ID):
[Case temperature (Tc) = 25 ℃]360 A
[Case temperature (Tc) = 25 ℃]360 A
Drain-source voltage (VDSS):80 V
Drain-source on resistance (RDS(on)):0.002 Ω
Package:TO-247
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