Transistor element query
Part Number:HY3608P
Part Type:N-Channel FET
Power Dissipation (PD):250 W
Drain current (ID):
[Case temperature (Tc) = 25 ℃]160 A
[Case temperature (Tc) = 25 ℃]160 A
Drain-source voltage (VDSS):85 V
Drain-source on resistance (RDS(on)):0.0075 Ω
Package:TO-220
More N-Channel FETSST65R420S2IRFZ45MDP1922IRFU3222SK413CM60N06F2SK2746CRST041N08NIPI110N20N3G(110N20N)STW7NA1002SK3673-01MR2N6758HF5N65HTM040N03IXTH5N95