HY029N10P Datasheet_Transistor element query

Transistor element query

Input part number Input parameters

Part Number:HY029N10P

Part Type:N-Channel FET

Power Dissipation (P_D):
[Case temperature (Tc) = 25 ℃]394 W

Drain current (I_D):
[Case temperature (Tc) = 25 ℃]270 A

Drain-source voltage (V_DSS):100 V

Drain-source on resistance (R_DS(on)):0.0033 Ω

Package:TO-220