Transistor element query
Part Number:H7N1004DS
Part Type:N-Channel FET
Power Dissipation (PD):
[Case temperature (Tc) = 25 ℃]30 W
[Case temperature (Tc) = 25 ℃]30 W
Drain current (ID):
[Ambient temperature (Ta) = 25 ℃]25 A
[Ambient temperature (Ta) = 25 ℃]25 A
Drain-source voltage (VDSS):100 V
Drain-source on resistance (RDS(on)):0.035 Ω
Package:DPAK
More N-Channel FETBF410CSUB85N03-07PFLS31MEDMN601KIXFH24N50HMS85N95DHY3403D4N65FUTC2N602SK2800IRFP2432SK1636LIPB072N15N3GU3N602SK940