Transistor element query
Part Number:GW39NC60VD
Part Type:IGBT
Power Dissipation (PD):
[Case temperature (Tc) = 25 ℃]250 W
[Case temperature (Tc) = 25 ℃]250 W
Collector current (IC):
[Case temperature (Tc) = 100 ℃]40 A
[Case temperature (Tc) = 100 ℃]40 A
Collector-emitter voltage (VCES):600 V
Gate−emitter threshold voltage (VGE(th)):3.75~5.75 V
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 30 A]2.5 V
[Collector current (Ic) = 30 A]2.5 V
Package:TO-247
More IGBTSTGWA80H65FBAG(G80H65FBAG)2N6975FGH40N60UFDTGA25N120NDFGA25N120ANTDTUYGW25N135F1AHGTG40N60B3GT25G102GT60M323IKW50N60T(K50T60)IKW25N120T2(K25T1202)GT60J323BT40T60GT8G121HGTG40N60A4