FQI3N25 Datasheet_Transistor element query

Transistor element query

Input part number Input parameters

Part Number:FQI3N25

Part Type:N-Channel FET

Power Dissipation (P_D):
[Case temperature (Tc) = 25 ℃]45 W

Drain current (I_D):
[Case temperature (Tc) = 25 ℃]2.8 A

Drain-source voltage (V_DSS):250 V

Drain-source on resistance (R_DS(on)):2.2 Ω

Package:I2PAK