Transistor element query
Part Number:ES1D
Part Type:Ultrafast Recovery Diode
reverse recovery time (trr):35 ns
Peak Repetitive Reverse Voltage (VRRM):200 V
Average Rectified Output Current (IO):
[Ambient temperature (Ta) = 100 ℃]1 A
[Ambient temperature (Ta) = 100 ℃]1 A
Non-Repetitive Peak Forward Surge Current (IFSM):30 A
Forward Voltage (VF):0.95 V
[continuous forward current (IF) = 1 A]
[continuous forward current (IF) = 1 A]
reverse leakage current (IR):5 μA
[Ambient temperature (Ta) = 25 ℃]
[Ambient temperature (Ta) = 25 ℃]
Junction Capacitance (Cj):10 pF
Package:SMA/DO-214AC
SMA
SMAMore Ultrafast Recovery DiodeER1G-LSF58BYV27-50FS1BMFUS1M(1J)BYD167Z2CR104UF8001N58111S6SF14GUF1006SFF15A20FUS1G(1G)SF41G