Transistor element query
Part Number:4N65T
Part Type:N-Channel FET
Power Dissipation (PD):106 W
Drain current (ID):
[Ambient temperature (Ta) = 25 ℃]4 A
[Ambient temperature (Ta) = 25 ℃]4 A
Drain-source voltage (VDSS):650 V
Drain-source on resistance (RDS(on)):2.6 Ω
Package:TO-220
More N-Channel FETUV3710RFDH210N08MGF4402ASTB4NK60Z-116N602SK790IRFF111HY3003PIPD70R950CE(70S950CE)2SK3210SDH100N03IRFB3077PbFHY3208FS70UMJ-2BUK443/60B