Transistor element query
Part Number:4N65K
Part Type:N-Channel FET
Power Dissipation (PD):106 W
Drain current (ID):
[Ambient temperature (Ta) = 25 ℃]4 A
[Ambient temperature (Ta) = 25 ℃]4 A
Drain-source voltage (VDSS):650 V
Drain-source on resistance (RDS(on)):2.6 Ω
Package:TO-262
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