3N170 Datasheet_Transistor element query

Transistor element query

Input part number Input parameters

Part Number:3N170

Part Type:N-Channel FET

Power Dissipation (P_D):
[Case temperature (Tc) = 25 ℃]0.8 W

Drain current (I_D):0.03 A

Drain-source voltage (V_DSS):25 V

Drain-source on resistance (R_DS(on)):200 Ω

Remark:Vgs(th)≤2V

Package:TO-72