Transistor element query
Part Number:3DK9E
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.7 W
Collector maximum allowable current (ICM):0.8 A
Collector-base breakdown voltage (BVCBO):25 V
Collector-emitter breakdown voltage (BVCEO):20 V
Emitter-base breakdown voltage (BVEBO):5 V
Collector cut-off current (ICBO):1 μA
Collector-emitter leakage current (ICEO):5 μA
Transition frequency (fT):120 MHz
DC current gain (hFE):≥25
chip material:silicon
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