Transistor element query
Part Number:3DG112C
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.3 W
Collector maximum allowable current (ICM):0.05 A
Collector-base breakdown voltage (BVCBO):20 V
Collector-emitter breakdown voltage (BVCEO):15 V
Emitter-base breakdown voltage (BVEBO):4 V
Collector cut-off current (ICBO):0.1 μA
Emitter cut-off current (IEBO):0.1 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 0.01 A]0.35 V
[Collector current (Ic) = 0.01 A]0.35 V
Transition frequency (fT):700 MHz
DC current gain (hFE):40~270
Package:B-2
More NPN Transistor3DX200B3DG110M2SC761BC182BPBC238PCM3BX85B3DX200A3DG161N3DG161K3DG37CBSS102SC22163DX201BBCP147BC237PAL