Transistor element query
Part Number:3DG110C
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.3 W
Collector maximum allowable current (ICM):0.05 A
Collector-base breakdown voltage (BVCBO):60 V
Collector-emitter breakdown voltage (BVCEO):45 V
Collector cut-off current (ICBO):0.1 μA
Collector-emitter leakage current (ICEO):0.1 μA
Transition frequency (fT):150 MHz
DC current gain (hFE):≥30
chip material:silicon
More NPN Transistor3DG112B3DG4073DX4F3DG110M3DG409BC414CP3DG4143DG9A3DG4DBC108BPBC108CPBC107BP3DG44EBCP1493DK7B