3DD51E Datasheet_Transistor element query

Transistor element query

Input part number Input parameters

Part Number:3DD51E

Part Type:NPN Transistor

Collector Maximum Dissipated Power (P_CM):1 W

Collector maximum allowable current (I_CM):1 A

Collector-emitter breakdown voltage (BV_CEO):150 V

Emitter-base breakdown voltage (BV_EBO):3 V

Collector-emitter leakage current (I_CEO):400 μA

DC current gain (h_FE):≥10