Transistor element query
Part Number:3DD50C
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):1 W
Collector maximum allowable current (ICM):1 A
Collector-emitter breakdown voltage (BVCEO):80 V
Emitter-base breakdown voltage (BVEBO):3 V
Collector-emitter leakage current (ICEO):400 μA
DC current gain (hFE):≥10
More NPN Transistor3DD52ABSS132SD7743DD52C2N31192SC15733DK14C2SD7732SD668CDQ100123DD51A3DD51B3DD50DBD150C2SD1981