Transistor element query
Part Number:3CG100B
Part Type:PNP Transistor
Collector Maximum Dissipated Power (PCM):0.1 W
Collector maximum allowable current (ICM):-0.03 A
Collector-emitter breakdown voltage (BVCEO):-25 V
Emitter-base breakdown voltage (BVEBO):-4 V
Collector cut-off current (ICBO):-0.1 μA
Collector-emitter leakage current (ICEO):-0.1 μA
Emitter cut-off current (IEBO):-0.1 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = -0.01 A]-0.3 V
[Collector current (Ic) = -0.01 A]-0.3 V
Transition frequency (fT):100 MHz
DC current gain (hFE):25~270
chip material:silicon
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