Transistor element query
Part Number:2SD676
Part Type:NPN Transistor
Collector power dissipation (PC):
[Case temperature (Tc) = 25 ℃]125 W
[Case temperature (Tc) = 25 ℃]125 W
Collector current (IC):12 A
Collector-base voltage (VCBO):160 V
Collector-emitter voltage (VCEO):160 V
Emitter-base voltage (VEBO):5 V
Collector cut-off current (ICBO):1000 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 6 A]2.5 V
[Collector current (Ic) = 6 A]2.5 V
Transition frequency (fT):8 MHz
DC current gain (hFE):60~200
chip material:silicon
Complementary to:2SB656
Package:TO-3
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