晶体管元件查询
型号:IPT020N10N5
类型:N沟道场效应管
漏极电流(ID):
【管壳温度(Tc)=25 ℃】260 A
【管壳温度(Tc)=25 ℃】260 A
漏极和源极电压(VDSS):100 V
漏极和源极通态电阻(RDS(on)):0.002 Ω
总耗散功率(Ptot):
【管壳温度(Tc)=25 ℃】273 W
【管壳温度(Tc)=25 ℃】273 W
封装:PG-HSOF-8

更多N沟道场效应管BSH105LNE10N60IRF641STD11N65M2FQP9N50C2SK428FLM3742-18DADHF3205TTK13A50DTPV65R170MMGF2116SGF380N60SJ3SK273BR80N75IXFH120N20P