晶体管元件查询
型号:IPB120N04S4-01(4N0401)
类型:N沟道场效应管
漏极电流(ID):
【管壳温度(Tc)=25 ℃】120 A
【管壳温度(Tc)=25 ℃】120 A
漏极和源极电压(VDSS):40 V
漏极和源极通态电阻(RDS(on)):0.0019 Ω
总耗散功率(Ptot):
【管壳温度(Tc)=25 ℃】188 W
【管壳温度(Tc)=25 ℃】188 W
封装:TO-263

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