晶体管元件查询
型号:H6N80
类型:N沟道场效应管
耗散功率(PD):170 W
漏极电流(ID):4.2 A
漏极和源极电压(VDSS):800 V
更多N沟道场效应管FHS170N8F3ASVG076R5NT2SK68PHD50N06LTFS5ASJ-06FSKSS046N08NSGF420N80W32SK3141NEZ0910-4AFQP10N60C2SK1689IRF244CM80N06STU6NA1002SK4115
更多N沟道场效应管FHS170N8F3ASVG076R5NT2SK68PHD50N06LTFS5ASJ-06FSKSS046N08NSGF420N80W32SK3141NEZ0910-4AFQP10N60C2SK1689IRF244CM80N06STU6NA1002SK4115