晶体管元件查询
型号:H6N80
类型:N沟道场效应管
耗散功率(PD):170 W
漏极电流(ID):4.2 A
漏极和源极电压(VDSS):800 V
更多N沟道场效应管SVG103R0NTSGI600N65W33SK2962SK3391SGH5003EIXFX94N50P2IPD70R360P7S(70S360P7)IPP052N08N5FQP19N20FSX02FA/LGFQP7N80C2SK26487N65HAT2205CIRFK2FC50
更多N沟道场效应管SVG103R0NTSGI600N65W33SK2962SK3391SGH5003EIXFX94N50P2IPD70R360P7S(70S360P7)IPP052N08N5FQP19N20FSX02FA/LGFQP7N80C2SK26487N65HAT2205CIRFK2FC50