晶体管元件查询
型号:3SK113
类型:N沟道场效应管
耗散功率(PD):0.2 W
漏极电流(ID):0.08 A
漏极和源极电压(VDSS):12 V
封装:4-175A

更多N沟道场效应管2SK2625LSIXFK44N50PDHD0159IXFH60N20AHK6030LXJCS4N65CLNC12N65CEBF630P50N03LDGSGW280N60W3IRFR012MTP5N40STP4NA60FTK22A10N1IPLU300N04S4-R7(4N04R7)
更多N沟道场效应管2SK2625LSIXFK44N50PDHD0159IXFH60N20AHK6030LXJCS4N65CLNC12N65CEBF630P50N03LDGSGW280N60W3IRFR012MTP5N40STP4NA60FTK22A10N1IPLU300N04S4-R7(4N04R7)