晶体管元件查询
型号:2SK1963
类型:N沟道场效应管
耗散功率(PD):200 W
漏极电流(ID):0.06 A
漏极和源极电压(VDSS):4 V
封装:4-218

更多N沟道场效应管H5N2004DSFS10ASJ-3KHB4D5N60PWFP8N602SK1254L2SK1113DH140N09RQK0606KGDQAJCS4N60SIXTH50N25T2SK2329LIRFSL3607PbFIRF522FDBL9403-F085LSGN085R065W3
更多N沟道场效应管H5N2004DSFS10ASJ-3KHB4D5N60PWFP8N602SK1254L2SK1113DH140N09RQK0606KGDQAJCS4N60SIXTH50N25T2SK2329LIRFSL3607PbFIRF522FDBL9403-F085LSGN085R065W3