Transistors are diodes, transistors, field effect transistors, thyristors and other electronic components made of semiconductor materials. This page is mainly used to query the basic parameters of these components, and some components display package renderings.​

There are two ways to query

Enter the model number to check the parameters: You can enter the full model number such as "1N4007" to view the parameters directly, or enter a part of the model number such as "1N400" to display a list, click on a model to view the parameters.

Enter the parameter to check the model: mainly used for component selection, first select the transistor component type, enter one or two voltage values and current values, and click to query.

Example: (click the part number to view the parameters)

Crystal diodes
A device at both ends of a semiconductor, which transmits current in only one direction, i.e., a unidirectional conductive characteristic. Crystal diodes have a PN junction and are made of germanium or silicon and compound semiconductors. Crystal diodes are commonly used in circuits for rectifier, voltage regulation, photoelectric conversion, detection and other purposes.

​Thyristors
Tthyristor, is a kind of high-power semiconductor device with only two states of conduction and shutdown, which is mostly used for controllable rectification, inverter, frequency conversion, voltage regulation, contactless switching, etc.Thyristor elements are divided into unidirectional thyristors and bidirectional thyristors, both of which are three electrodes.
Unidirectional thyristor: A four-layer semiconductor structure (PNPN) with three PN junctions, three electrodes: anode (A), cathode (K), and gate (G).
Bidirectional thyristor: It is composed of NPNPN five-layer semiconductor material, which is equivalent to the reverse parallel connection of two unidirectional thyristors, but only one gate. The three electrodes are: the first anode (T1), the second anode (T2), and the gate (G).​

Transistors
Semiconductor triplex devices, also known as bipolar transistors, have the effect of current amplification and are mainly used in circuits for electrical signal amplification. The transistor is composed of two adjacent PNs, which are divided into PNP type and NPN type according to their arrangement, and the three pins are the base (B), emitter (E), and collector (C). Transistors are the core devices in the circuits of electronic devices.

​Field-effect transistors
Field-effect transistors are divided into two categories: junction type (J-FET) and insulated gate type (MOS-FET).
According to the channel material: junction type and insulated gate type are divided into two types: N channel and P channel.
According to the conductive mode: depletion type and enhanced type, junction type FET are all depletion type, and insulated gate type FET has both depletion type and enhanced type.
A field-effect transistor (FET) is a semiconductor device that uses the electric field effect of the control input loop to control the output loop current, and is a new generation of amplification components developed based on the principle of a transistor. Because it conducts electricity only by the majority of the carriers in semiconductors, it is also known as a unipolar transistor. Field-effect transistors has 3 electrodes: gate (G), drain (D), and source (S).​